Assignee

HISAMOTO YOSHIAKI

JP·2 granted patents·4 citations·filing 2007–2011

Technology mixH10D2 Y10S1

Top patents by PatentIndex Score

2 records

0172US8274095B2Semiconductor deviceHISAMOTO YOSHIAKI·Filed 2011·Granted Sep 25, 2012·4 cites·7 claims
0238US8742474B2Power semiconductor device having an active region and an electric field reduction regionHISAMOTO YOSHIAKI·Filed 2007·Granted Jun 3, 2014·0 cites·8 claims

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