Assignee
HOHAGE JOERG
DE·3 granted patents·1 pending application·2 citations·filing 2007–2012
Top patents by PatentIndex Score
4 records- 0163US8546274B2Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer materialHOHAGE JOERG·Filed 2010·Granted Oct 1, 2013·2 cites·14 claims
- 0246US8211795B2Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatmentHOHAGE JOERG·Filed 2008·Granted Jul 3, 2012·0 cites·22 claims
- 0341US2008203487A1Field effect transistor having an interlayer dielectric material having increased intrinsic stressHOHAGE JOERG·Filed 2007·Application pending·0 cites
- 0439US8759232B2Compressive stress transfer in an interlayer dielectric of a semiconductor device by providing a bi-layer of superior adhesion and internal stressHOHAGE JOERG·Filed 2012·Granted Jun 24, 2014·0 cites·19 claims
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