Assignee

HOLTEK MICROELECTONICS INC

TW·1 granted patent·14 citations·filing 1996–1996

Technology mixG03F1 H10D1 H10W1

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0142US5866447AModified zero layer align method of twin well MOS fabricationHOLTEK MICROELECTONICS INC·Filed 1996·Granted Feb 2, 1999·14 cites·5 claims

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