Assignee
HONG CHEONG MIN
US·11 granted patents·1 pending application·28 citations·filing 2010–2014
Top patents by PatentIndex Score
12 records- 0194US8932925B1Split-gate non-volatile memory (NVM) cell and device structure integrationHONG CHEONG MIN·Filed 2013·Granted Jan 13, 2015·17 cites·16 claims
- 0277US9111639B2Biasing split gate memory cell during power-off modeHONG CHEONG MIN·Filed 2013·Granted Aug 18, 2015·6 cites·19 claims
- 0368US9006093B2Non-volatile memory (NVM) and high voltage transistor integrationHONG CHEONG MIN·Filed 2013·Granted Apr 14, 2015·2 cites·15 claims
- 0465US8163609B2Nanocrystal memory with differential energy bands and method of formationHONG CHEONG MIN·Filed 2010·Granted Apr 24, 2012·1 cites·7 claims
- 0560US9076519B2Reram device structureHONG CHEONG MIN·Filed 2012·Granted Jul 7, 2015·2 cites·9 claims
- 0655US9397176B2Method of forming split gate memory with improved reliabilityHONG CHEONG MIN·Filed 2014·Granted Jul 19, 2016·0 cites·19 claims
- 0755US8860001B2ReRAM device structureHONG CHEONG MIN·Filed 2012·Granted Oct 14, 2014·0 cites·9 claims
- 0849US9590058B2Methods and structures for a split gate memory cell structureHONG CHEONG MIN·Filed 2013·Granted Mar 7, 2017·0 cites·12 claims
- 0947US9514945B2Nanocrystal memory and methods for forming sameHONG CHEONG MIN·Filed 2014·Granted Dec 6, 2016·0 cites·20 claims
- 1046US9349453B2Semiconductor memory cell and driver circuitry with gate oxide formed simultaneouslyHONG CHEONG MIN·Filed 2014·Granted May 24, 2016·0 cites·13 claims
- 1140US8953378B2Split gate programmingHONG CHEONG MIN·Filed 2012·Granted Feb 10, 2015·0 cites·20 claims
- 1240US2014209995A1Non-Volatile Memory Cells Having Carbon Impurities and Related Manufacturing MethodsHONG CHEONG MIN·Filed 2013·Application pending·0 cites
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →