Assignee
HORI TSUTOMU
JP·2 granted patents·5 pending applications·3 citations·filing 2011–2012
Top patents by PatentIndex Score
7 records- 0182US8642153B2Single crystal silicon carbide substrate and method of manufacturing the sameHORI TSUTOMU·Filed 2012·Granted Feb 4, 2014·2 cites·5 claims
- 0257US8642154B2Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingotHORI TSUTOMU·Filed 2012·Granted Feb 4, 2014·1 cites·6 claims
- 0337US2012244307A1Silicon carbide substrateHORI TSUTOMU·Filed 2012·Application pending·0 cites
- 0437US2012319125A1Silicon carbide substrate and method of manufacturing the sameHORI TSUTOMU·Filed 2012·Application pending·0 cites
- 0535US2012161158A1Combined substrate having silicon carbide substrateHORI TSUTOMU·Filed 2011·Application pending·0 cites
- 0635US2012276715A1Method for manufacturing combined substrate having silicon carbide substrateHORI TSUTOMU·Filed 2011·Application pending·0 cites
- 0735US2012273800A1Composite substrate having single-crystal silicon carbide substrateHORI TSUTOMU·Filed 2011·Application pending·0 cites
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