Assignee
HORNG CHENG T
US·13 granted patents·388 citations·filing 2008–2012
Top patents by PatentIndex Score
13 records- 0199US8823118B2Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layerHORNG CHENG T·Filed 2012·Granted Sep 2, 2014·86 cites·12 claims
- 0299US8470462B2Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctionsHORNG CHENG T·Filed 2010·Granted Jun 25, 2013·71 cites·12 claims
- 0398US8138561B2Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAMHORNG CHENG T·Filed 2008·Granted Mar 20, 2012·58 cites·10 claims
- 0498US8080432B2High performance MTJ element for STT-RAM and method for making the sameHORNG CHENG T·Filed 2010·Granted Dec 20, 2011·48 cites·14 claims
- 0596US8057925B2Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the sameHORNG CHENG T·Filed 2008·Granted Nov 15, 2011·30 cites·11 claims
- 0695US8609262B2Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM applicationHORNG CHENG T·Filed 2009·Granted Dec 17, 2013·33 cites·16 claims
- 0793US8456893B2Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching currentHORNG CHENG T·Filed 2009·Granted Jun 4, 2013·19 cites·18 claims
- 0893US8404367B2Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the sameHORNG CHENG T·Filed 2011·Granted Mar 26, 2013·10 cites·10 claims
- 0992US8436437B2High performance MTJ elements for STT-RAM and method for making the sameHORNG CHENG T·Filed 2010·Granted May 7, 2013·10 cites·11 claims
- 1086US8726491B2Method of forming a spin-transfer torque random access memory (STT-RAM) deviceHORNG CHENG T·Filed 2011·Granted May 20, 2014·5 cites·13 claims
- 1186US8269292B2Magnetic tunnel junction (MTJ) to reduce spin transfer magnetizaton switching currentHORNG CHENG T·Filed 2009·Granted Sep 18, 2012·10 cites·4 claims
- 1282US8058698B2High performance MTJ element for STT-RAM and method for making the sameHORNG CHENG T·Filed 2010·Granted Nov 15, 2011·4 cites·4 claims
- 1377US8176622B2Process for manufacturing a magnetic tunnel junction (MTJ) deviceHORNG CHENG T·Filed 2010·Granted May 15, 2012·4 cites·4 claims
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