Assignee
HSHIEH FWU-IUAN
US·7 granted patents·3 pending applications·53 citations·filing 1994–2011
Top patents by PatentIndex Score
10 records- 0190US8058670B2Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-upHSHIEH FWU-IUAN·Filed 2009·Granted Nov 15, 2011·19 cites·20 claims
- 0279US7816729B2Trenched MOSFET device with trenched contactsHSHIEH FWU-IUAN·Filed 2006·Granted Oct 19, 2010·8 cites·18 claims
- 0359US8389354B2Trenched MOSFETS with improved gate-drain (GD) clamp diodesHSHIEH FWU-IUAN·Filed 2009·Granted Mar 5, 2013·1 cites·6 claims
- 0458US8461001B2Methods for manufacturing trench MOSFET with implanted drift regionHSHIEH FWU-IUAN·Filed 2009·Granted Jun 11, 2013·0 cites·11 claims
- 0557US8159021B2Trench MOSFET with double epitaxial structureHSHIEH FWU-IUAN·Filed 2008·Granted Apr 17, 2012·1 cites·23 claims
- 0654US5585736AContact probe utilizing conductive meltable probing materialHSHIEH FWU IUAN·Filed 1994·Granted Dec 17, 1996·22 cites·14 claims
- 0749US8115252B2Elimination of gate oxide weak spot in deep trenchHSHIEH FWU-IUAN·Filed 2005·Granted Feb 14, 2012·2 cites·12 claims
- 0848US2012083083A1Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structuresHSHIEH FWU-IUAN·Filed 2011·Application pending·0 cites
- 0938US2012037954A1Equal Potential Ring Structures of Power Semiconductor with Trenched ContactHSHIEH FWU-IUAN·Filed 2010·Application pending·0 cites
- 1037US2012037983A1Trench mosfet with integrated schottky rectifier in same cellHSHIEH FWU-IUAN·Filed 2010·Application pending·0 cites
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