P

Assignee

HSU PENG-FU

TW3 patents

Top patents by PatentIndex Score

US8853068B2Oct 7, 2014

Method of fabricating dual high-k metal gate for MOS devices

HSU PENG-FU9 citations83
US8105931B2Jan 31, 2012

Method of fabricating dual high-k metal gates for MOS devices

HSU PENG-FU10 citations83
US8536660B2Sep 17, 2013

Hybrid process for forming metal gates of MOS devices

HSU PENG-FU8 citations82