Assignee
HU YONGZHONG
US·4 granted patents·13 citations·filing 2010–2012
Top patents by PatentIndex Score
4 records- 0188US9337329B2Method of fabrication and device configuration of asymmetrical DMOSFET with schottky barrier sourceHU YONGZHONG·Filed 2011·Granted May 10, 2016·9 cites·15 claims
- 0270US8105905B2Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regionsHU YONGZHONG·Filed 2010·Granted Jan 31, 2012·2 cites·6 claims
- 0366US8835251B2Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon processHU YONGZHONG·Filed 2010·Granted Sep 16, 2014·2 cites·15 claims
- 0452US8236653B2Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regionsHU YONGZHONG·Filed 2012·Granted Aug 7, 2012·0 cites·16 claims
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