Assignee
HUANG HSUEH-I
TW·1 granted patent·1 pending application·12 citations·filing 2009–2010
Top patents by PatentIndex Score
2 records- 0181US8897470B2Method of fabricating integrated semiconductor device with MOS, NPN BJT, LDMOS, pre-amplifier and MEMS unitHUANG HSUEH-I·Filed 2009·Granted Nov 25, 2014·12 cites·7 claims
- 0230US2012037989A1Ldmos having single-strip source contact and method for manufacturing sameHUANG HSUEH-I·Filed 2010·Application pending·0 cites
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