Assignee
HUANG YIN-FU
TW·3 granted patents·3 citations·filing 2009–2012
Top patents by PatentIndex Score
3 records- 0162US8258042B2Buried layer of an integrated circuitHUANG YIN-FU·Filed 2009·Granted Sep 4, 2012·2 cites·20 claims
- 0256US8304830B2LDPMOS structure for enhancing breakdown voltage and specific on resistance in biCMOS-DMOS processHUANG YIN-FU·Filed 2010·Granted Nov 6, 2012·1 cites·7 claims
- 0347US8507993B2Buried layer of an integrated circuitHUANG YIN-FU·Filed 2012·Granted Aug 13, 2013·0 cites·18 claims
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