Assignee
Hubei Jiufengshan Laboratory
CN·1 granted patent·6 pending applications·0 citations·filing 2022–2025
Top patents by PatentIndex Score
7 records- 0157US2025015203A1Schottky barrier diode device and manufacturing method thereforHubei Jiufengshan Laboratory·Filed 2024·Application pending·0 cites
- 0253US2024170540A1Silicon carbide semiconductor device and manufacturing method thereforHubei Jiufengshan Laboratory·Filed 2024·Application pending·0 cites
- 0349US2025203958A1Terminal structure, manufacturing method and power deviceHubei Jiufengshan Laboratory·Filed 2022·Application pending·0 cites
- 0447US2025169126A1Silicon carbide semiconductor device and manufacturing method thereforHubei Jiufengshan Laboratory·Filed 2022·Application pending·0 cites
- 0547US2024282810A1Silicon carbide mosfet device and manufacturing method thereforeHubei Jiufengshan Laboratory·Filed 2022·Application pending·0 cites
- 0647US2025261414A1Silicon carbide mosfet device and manufacturing method thereforHubei Jiufengshan Laboratory·Filed 2022·Application pending·0 cites
- 0741US12562547B2Integration method for modularized silicon-based heterogeneous photoelectric integrated architectureHubei Jiufengshan Laboratory·Filed 2025·Granted Feb 24, 2026·0 cites·5 claims
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