Assignee
ICHINOSE KAZUHITO
JP·3 granted patents·3 citations·filing 2010–2011
Top patents by PatentIndex Score
3 records- 0160US8158473B2Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloyICHINOSE KAZUHITO·Filed 2010·Granted Apr 17, 2012·1 cites·7 claims
- 0259US8685854B2Method of forming a via in a semiconductor deviceICHINOSE KAZUHITO·Filed 2011·Granted Apr 1, 2014·2 cites·12 claims
- 0347US8058166B2Method of manufacturing a semiconductor deviceICHINOSE KAZUHITO·Filed 2010·Granted Nov 15, 2011·0 cites·5 claims
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