Assignee
INFINEON TECHNOLOGIES AUSTRIA
AT·392 granted patents·88 pending applications·2,236 citations·filing 2005–2016
Top patents by PatentIndex Score
480 records- 0198US9356017B1Switch circuit and semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted May 31, 2016·28 cites·20 claims
- 0298US8766833B1System and method for calibrating a circuitINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Jul 1, 2014·47 cites·34 claims
- 0398US7538412B2Semiconductor device with a field stop zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted May 26, 2009·144 cites·14 claims
- 0498US7449778B2Power semiconductor module as H-bridge circuit and method for producing the sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Nov 11, 2008·81 cites·16 claims
- 0597US9293558B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Mar 22, 2016·31 cites·10 claims
- 0697US9048303B1Group III-nitride-based enhancement mode transistorINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Jun 2, 2015·32 cites·18 claims
- 0797US8022474B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Sep 20, 2011·34 cites·17 claims
- 0896US9373700B2Field plate trench transistor and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Jun 21, 2016·9 cites·20 claims
- 0996US9305917B1High electron mobility transistor with RC network integrated into gate structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Apr 5, 2016·15 cites·20 claims
- 1096US8384151B2Semiconductor device and a reverse conducting IGBTINFINEON TECHNOLOGIES AUSTRIA·Filed 2011·Granted Feb 26, 2013·26 cites·27 claims
- 1196US7777553B2Simplified switching circuitINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Aug 17, 2010·39 cites·18 claims
- 1295US9350244B2Switching regulator with increased light load efficiency in pulse frequency modulation modeINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted May 24, 2016·15 cites·22 claims
- 1395US8884420B1Multichip deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Nov 11, 2014·18 cites·20 claims
- 1495US8871593B1Semiconductor device with buried gate electrode and gate contactsINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Oct 28, 2014·20 cites·20 claims
- 1595US7858478B2Method for producing an integrated circuit including a trench transistor and integrated circuitINFINEON TECHNOLOGIES AUSTRIA·Filed 2010·Granted Dec 28, 2010·20 cites·3 claims
- 1694US9006811B2Semiconductor device including a fin and a drain extension region and manufacturing methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Apr 14, 2015·16 cites·23 claims
- 1794US7781294B2Method for producing an integrated circuit including a semiconductorINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Aug 24, 2010·27 cites·26 claims
- 1894US7605580B2Integrated hybrid current sensorINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Oct 20, 2009·30 cites·27 claims
- 1993US9368617B2Superjunction device and semiconductor structure comprising the sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Jun 14, 2016·13 cites·4 claims
- 2093US7459365B2Method for fabricating a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 2, 2008·29 cites·32 claims
- 2192US9397022B2Semiconductor device having a locally reinforced metallization structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Jul 19, 2016·9 cites·7 claims
- 2292US9355957B2Semiconductor device with self-aligned contact plugsINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted May 31, 2016·7 cites·3 claims
- 2392US7842590B2Method for manufacturing a semiconductor substrate including laser annealingINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Nov 30, 2010·23 cites·21 claims
- 2491US9257549B2Semiconductor field effect power switching deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Feb 9, 2016·8 cites·25 claims
- 2591US9152163B1Regulation of a load current-to-sensing current ratio in a current sensing power metal-oxide-semiconductor field-effect transistor (MOSFET)INFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Oct 6, 2015·18 cites·20 claims
- 2691US9123791B2Semiconductor device and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Sep 1, 2015·9 cites·20 claims
- 2791US9024383B2Semiconductor device with a super junction structure with one, two or more pairs of compensation layersINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted May 5, 2015·11 cites·18 claims
- 2891US8022470B2Semiconductor device with a trench gate structure and method for the production thereofINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Sep 20, 2011·19 cites·23 claims
- 2991US7893486B2Field plate trench transistor and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted Feb 22, 2011·12 cites·7 claims
- 3091US7598143B2Method for producing an integrated circuit with a trench transistor structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Oct 6, 2009·22 cites·24 claims
- 3191US7582922B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Sep 1, 2009·20 cites·18 claims
- 3290US9350342B2System and method for generating an auxiliary voltageINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted May 24, 2016·8 cites·20 claims
- 3390US9236800B2System for balancing current supplied to a loadINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Jan 12, 2016·8 cites·15 claims
- 3490US9231100B2Semiconductor device and method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Jan 5, 2016·8 cites·16 claims
- 3590US9196560B2Semiconductor device having a locally reinforced metallization structure and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Nov 24, 2015·12 cites·14 claims
- 3690US8344415B2Semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jan 1, 2013·12 cites·15 claims
- 3790US7851349B2Method for producing a connection electrode for two semiconductor zones arranged one above anotherINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 14, 2010·15 cites·11 claims
- 3890US7710167B2Circuits and methods for controlling an on/off state of a switchINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted May 4, 2010·18 cites·28 claims
- 3990US7491629B2Method for producing an n-doped field stop zone in a semiconductor body and semiconductor component having a field stop zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2005·Granted Feb 17, 2009·15 cites·12 claims
- 4090US7372103B2MOS field plate trench transistor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted May 13, 2008·18 cites·23 claims
- 4189US9287404B2Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field platesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Mar 15, 2016·7 cites·6 claims
- 4289US9281392B2Charge compensation structure and manufacturing thereforINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Mar 8, 2016·11 cites·20 claims
- 4389US8841940B2System and method for a driver circuitINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Sep 23, 2014·9 cites·21 claims
- 4489US8026704B2System and method for controlling a converterINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Sep 27, 2011·30 cites·15 claims
- 4589US7936575B2Synchronous rectifier control using load condition determinationINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted May 3, 2011·24 cites·29 claims
- 4689US7688602B2Synchronous rectifier control circuit and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Mar 30, 2010·25 cites·25 claims
- 4789US7582531B2Method for producing a buried semiconductor layerINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Sep 1, 2009·15 cites·13 claims
- 4888US9252263B1Multiple semiconductor device trenches per cell pitchINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Feb 2, 2016·9 cites·26 claims
- 4988US9142550B2High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diodeINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Sep 22, 2015·9 cites·20 claims
- 5088US9042127B2LED power supplyINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted May 26, 2015·9 cites·23 claims
Showing the top 50 of 480 patent records by PatentIndex Score.
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