Assignee

INTERNUIVERSITAIR MICROELEKTRO

BE·1 granted patent·51 citations·filing 2000–2000

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0185US6576151B1Etching of silicon nitride by anhydrous halogen gasINTERNUIVERSITAIR MICROELEKTRO·Filed 2000·Granted Jun 10, 2003·51 cites·10 claims

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