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IQE PLC

GB29 patents

Top patents by PatentIndex Score

US10075143B2Sep 11, 2018

Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride

IQE PLC6 citations82
US9917156B1Mar 13, 2018

Nucleation layer for growth of III-nitride structures

IQE PLC9 citations78
US9768339B2Sep 19, 2017

Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs

IQE PLC8 citations76
US10605987B2Mar 31, 2020

Re-based integrated photonic and electronic layered structures

IQE PLC4 citations71
US10566944B2Feb 18, 2020

Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride

IQE PLC2 citations71
US12382690B2Aug 5, 2025

Structure and method using a single crystalline bixbyite oxide layer in a orientation

IQE PLC0 citations62
US11757008B2Sep 12, 2023

Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor

IQE PLC0 citations62
US11611001B2Mar 21, 2023

Localized strain fields in epitaxial layer over cREO

IQE PLC0 citations62
US11495670B2Nov 8, 2022

Integrated epitaxial metal electrodes

IQE PLC0 citations62
US10923345B2Feb 16, 2021

Epitaxial metal oxide as buffer for epitaxial III-V layers

IQE PLC0 citations62
US10332857B2Jun 25, 2019

Rare earth pnictides for strain management

IQE PLC1 citations62
US11133408B2Sep 28, 2021

Dielectric passivation for layered structures

IQE PLC0 citations60
US11063114B2Jul 13, 2021

III-N to rare earth transition in a semiconductor structure

IQE PLC1 citations60
US11201451B2Dec 14, 2021

Porous distributed Bragg reflectors for laser applications

IQE PLC1 citations58
US11355340B2Jun 7, 2022

Semiconductor material having tunable permittivity and tunable thermal conductivity

IQE PLC1 citations56
US11133389B2Sep 28, 2021

Pnictide nanocomposite structure for lattice stabilization

IQE PLC0 citations56
US12518962B2Jan 6, 2026

Method and system for mixed group V precursor process

IQE PLC0 citations53
US12408503B2Sep 2, 2025

Layered structure with deformation control layer

IQE PLC0 citations52
US10615141B2Apr 7, 2020

Pnictide buffer structures and devices for GaN base applications

IQE PLC0 citations52
US10573686B2Feb 25, 2020

Epitaxial AIN/cREO structure for RF filter applications

IQE PLC0 citations52
US10418457B2Sep 17, 2019

Metal electrode with tunable work functions

IQE PLC0 citations52
US10825912B2Nov 3, 2020

Integrated epitaxial metal electrodes

IQE PLC0 citations51
US10128350B2Nov 13, 2018

Integrated epitaxial metal electrodes

IQE PLC1 citations51
US11251320B2Feb 15, 2022

Photodetector structures formed on high-index substrates

IQE PLC0 citations47
US11069825B2Jul 20, 2021

Optoelectronic devices formed over a buffer

IQE PLC0 citations46
US10580871B2Mar 3, 2020

Nucleation layer for growth of III-nitride structures

IQE PLC0 citations46
US12531393B2Jan 20, 2026

Porous distributed Bragg reflector apparatuses, systems, and methods

IQE PLC0 citations45
US10367107B2Jul 30, 2019

Multijunction photovoltaic device having an Si barrier between cells

IQE PLC0 citations45
US11005231B2May 11, 2021

Strain-balanced semiconductor structure

IQE PLC0 citations41