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IQE PLC
GB29 patents
Top patents by PatentIndex Score
US10075143B2Sep 11, 2018
Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
IQE PLC6 citations82
US9917156B1Mar 13, 2018
Nucleation layer for growth of III-nitride structures
IQE PLC9 citations78
US9768339B2Sep 19, 2017
Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs
IQE PLC8 citations76
US10605987B2Mar 31, 2020
Re-based integrated photonic and electronic layered structures
IQE PLC4 citations71
US10566944B2Feb 18, 2020
Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
IQE PLC2 citations71
US12382690B2Aug 5, 2025
Structure and method using a single crystalline bixbyite oxide layer in a orientation
IQE PLC0 citations62
US11757008B2Sep 12, 2023
Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor
IQE PLC0 citations62
US11611001B2Mar 21, 2023
Localized strain fields in epitaxial layer over cREO
IQE PLC0 citations62
US11495670B2Nov 8, 2022
Integrated epitaxial metal electrodes
IQE PLC0 citations62
US10923345B2Feb 16, 2021
Epitaxial metal oxide as buffer for epitaxial III-V layers
IQE PLC0 citations62
US10332857B2Jun 25, 2019
Rare earth pnictides for strain management
IQE PLC1 citations62
US11133408B2Sep 28, 2021
Dielectric passivation for layered structures
IQE PLC0 citations60
US11063114B2Jul 13, 2021
III-N to rare earth transition in a semiconductor structure
IQE PLC1 citations60
US11201451B2Dec 14, 2021
Porous distributed Bragg reflectors for laser applications
IQE PLC1 citations58
US11355340B2Jun 7, 2022
Semiconductor material having tunable permittivity and tunable thermal conductivity
IQE PLC1 citations56
US11133389B2Sep 28, 2021
Pnictide nanocomposite structure for lattice stabilization
IQE PLC0 citations56
US12518962B2Jan 6, 2026
Method and system for mixed group V precursor process
IQE PLC0 citations53
US12408503B2Sep 2, 2025
Layered structure with deformation control layer
IQE PLC0 citations52
US10615141B2Apr 7, 2020
Pnictide buffer structures and devices for GaN base applications
IQE PLC0 citations52
US10573686B2Feb 25, 2020
Epitaxial AIN/cREO structure for RF filter applications
IQE PLC0 citations52
US10418457B2Sep 17, 2019
Metal electrode with tunable work functions
IQE PLC0 citations52
US10825912B2Nov 3, 2020
Integrated epitaxial metal electrodes
IQE PLC0 citations51
US10128350B2Nov 13, 2018
Integrated epitaxial metal electrodes
IQE PLC1 citations51
US11251320B2Feb 15, 2022
Photodetector structures formed on high-index substrates
IQE PLC0 citations47
US11069825B2Jul 20, 2021
Optoelectronic devices formed over a buffer
IQE PLC0 citations46
US10580871B2Mar 3, 2020
Nucleation layer for growth of III-nitride structures
IQE PLC0 citations46
US12531393B2Jan 20, 2026
Porous distributed Bragg reflector apparatuses, systems, and methods
IQE PLC0 citations45
US10367107B2Jul 30, 2019
Multijunction photovoltaic device having an Si barrier between cells
IQE PLC0 citations45
US11005231B2May 11, 2021
Strain-balanced semiconductor structure
IQE PLC0 citations41