Assignee
IWAMI MASAYUKI
JP·2 granted patents·2 citations·filing 2011–2012
Top patents by PatentIndex Score
2 records- 0161US8860038B2Nitride semiconductor device and manufacturing method for the sameIWAMI MASAYUKI·Filed 2012·Granted Oct 14, 2014·2 cites·13 claims
- 0237US8552531B2Nitride-based compound semiconductor and nitride-based compound semiconductor deviceIWAMI MASAYUKI·Filed 2011·Granted Oct 8, 2013·0 cites·10 claims
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