Assignee
IWAMURO NORIYUKI
JP·6 granted patents·43 citations·filing 2008–2011
Top patents by PatentIndex Score
6 records- 0188US8390027B2Gallium nitride semiconductor device and manufacturing method thereofIWAMURO NORIYUKI·Filed 2008·Granted Mar 5, 2013·13 cites·5 claims
- 0282US8198676B2P-channel silicon carbide MOSFETIWAMURO NORIYUKI·Filed 2010·Granted Jun 12, 2012·7 cites·2 claims
- 0381US8431991B2Semiconductor deviceIWAMURO NORIYUKI·Filed 2008·Granted Apr 30, 2013·9 cites·10 claims
- 0478US8564028B2Low on-resistance wide band gap semiconductor device and method for producing the sameIWAMURO NORIYUKI·Filed 2009·Granted Oct 22, 2013·6 cites·6 claims
- 0575US8299522B2Semiconductor deviceIWAMURO NORIYUKI·Filed 2011·Granted Oct 30, 2012·3 cites·4 claims
- 0672US8188511B2Semiconductor device and method of manufacturing thereofIWAMURO NORIYUKI·Filed 2008·Granted May 29, 2012·5 cites·18 claims
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