Assignee
JAPAN ADVANCED INST OF SCIENCE AND TECH
JP·2 granted patents·3 citations·filing 2012–2014
Top patents by PatentIndex Score
2 records- 0174US9552985B2Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic deviceJAPAN ADVANCED INST OF SCIENCE AND TECH·Filed 2014·Granted Jan 24, 2017·3 cites·16 claims
- 0246US9745403B2Polymer raw material and polymer materialJAPAN ADVANCED INST OF SCIENCE AND TECH·Filed 2012·Granted Aug 29, 2017·0 cites·11 claims
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