Assignee
KAMEI KAZUHITO
JP·3 granted patents·2 citations·filing 2011–2012
Top patents by PatentIndex Score
3 records- 0163US8388752B2Method of manufacturing a silicon carbide single crystalKAMEI KAZUHITO·Filed 2011·Granted Mar 5, 2013·2 cites·4 claims
- 0258US9388508B2Manufacturing apparatus of SiC single crystal, jig for use in the manufacturing apparatus, and method for manufacturing SiC single crystalKAMEI KAZUHITO·Filed 2011·Granted Jul 12, 2016·0 cites·12 claims
- 0350US9702056B2Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatusKAMEI KAZUHITO·Filed 2012·Granted Jul 11, 2017·0 cites·5 claims
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