Assignee
KASAI HITOSHI
JP2 patents
Top patents by PatentIndex Score
US8143140B2Mar 27, 2012
Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same
KASAI HITOSHI7 citations82
US8404569B2Mar 26, 2013
Fabrication method and fabrication apparatus of group III nitride crystal substance
KASAI HITOSHI1 citations60