Assignee
KAWAMURA KEISUKE
JP·2 granted patents·0 citations·filing 2008–2009
Top patents by PatentIndex Score
2 records- 0143US8563442B2Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrateKAWAMURA KEISUKE·Filed 2009·Granted Oct 22, 2013·0 cites·5 claims
- 0241US8931432B2Vacuum processing apparatusKAWAMURA KEISUKE·Filed 2008·Granted Jan 13, 2015·0 cites·6 claims
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