Assignee

KAWASHIMA YOSHIYA

JP·2 granted patents·0 citations·filing 2011–2011

Technology mixH10D2 H01L1

Top patents by PatentIndex Score

2 records

0135US8536647B2Semiconductor deviceKAWASHIMA YOSHIYA·Filed 2011·Granted Sep 17, 2013·0 cites·9 claims
0227US8643103B2Semiconductor device including gate contact region and protruding gate electrodeKAWASHIMA YOSHIYA·Filed 2011·Granted Feb 4, 2014·0 cites·7 claims

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