Assignee

KIM GO-UN

KR·1 granted patent·5 citations·filing 2009–2009

Technology mixC09K1 H10P1

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1 record

0171US8685272B2Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor deviceKIM GO-UN·Filed 2009·Granted Apr 1, 2014·5 cites·15 claims

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