Assignee

KIM YIHWAN

US·1 granted patent·1 pending application·5 citations·filing 2006–2013

Technology mixH10P2 C30B1 H01L1 H10D1

Top patents by PatentIndex Score

2 records

0172US8394196B2Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbonKIM YIHWAN·Filed 2006·Granted Mar 12, 2013·5 cites·19 claims
0237US2013280891A1Method and apparatus for germanium tin alloy formation by thermal cvdKIM YIHWAN·Filed 2013·Application pending·0 cites

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