Assignee
KOMATSU DENSHI KINZOKU KK
US·137 granted patents·6 pending applications·2,976 citations·filing 1975–2008
Top patents by PatentIndex Score
143 records- 0192US4038370AMethod of producing high-purity transparent vitreous silicaKOMATSU DENSHI KINZOKU KK·Filed 1975·Granted Jul 26, 1977·56 cites·6 claims
- 0290US5897743AJig for peeling a bonded waferKOMATSU DENSHI KINZOKU KK·Filed 1997·Granted Apr 27, 1999·80 cites·6 claims
- 0390US5690742ASusceptor for an epitaxial growth apparatusKOMATSU DENSHI KINZOKU KK·Filed 1996·Granted Nov 25, 1997·360 cites·5 claims
- 0489US6858076B1Method and apparatus for manufacturing single-crystal ingotKOMATSU DENSHI KINZOKU KK·Filed 2000·Granted Feb 22, 2005·33 cites·6 claims
- 0589US5908246AUnsealing structure with cut out for shrink film sealed packagesKOMATSU DENSHI KINZOKU KK·Filed 1997·Granted Jun 1, 1999·144 cites·16 claims
- 0688US6036776AMethod and device for manufacturing single crystalsKOMATSU DENSHI KINZOKU KK·Filed 1998·Granted Mar 14, 2000·69 cites·4 claims
- 0788US5968262AMethod of fabricating silicon single crystalsKOMATSU DENSHI KINZOKU KK·Filed 1997·Granted Oct 19, 1999·65 cites·2 claims
- 0886US6869478B2Method for producing silicon single crystal having no flawKOMATSU DENSHI KINZOKU KK·Filed 2001·Granted Mar 22, 2005·29 cites·5 claims
- 0986US6733585B2Apparatus for pulling single crystal by CZ methodKOMATSU DENSHI KINZOKU KK·Filed 2001·Granted May 11, 2004·16 cites·19 claims
- 1085US5900059AMethod and apparatus for fabricating semiconductor single crystalKOMATSU DENSHI KINZOKU KK·Filed 1998·Granted May 4, 1999·53 cites·5 claims
- 1185US5316742ASingle crystal pulling apparatusKOMATSU DENSHI KINZOKU KK·Filed 1991·Granted May 31, 1994·44 cites·21 claims
- 1282US5932048AMethod of fabricating direct-bonded semiconductor wafersKOMATSU DENSHI KINZOKU KK·Filed 1997·Granted Aug 3, 1999·70 cites·3 claims
- 1381US7141992B2Method for measuring impurity metal concentrationKOMATSU DENSHI KINZOKU KK·Filed 2005·Granted Nov 28, 2006·14 cites·5 claims
- 1481US6117402ADevice for manufacturing single crystalsKOMATSU DENSHI KINZOKU KK·Filed 1999·Granted Sep 12, 2000·40 cites·2 claims
- 1581US5863829AProcess for fabricating SOI substrateKOMATSU DENSHI KINZOKU KK·Filed 1996·Granted Jan 26, 1999·61 cites·4 claims
- 1680US5537325AApparatus for and method of manufacturing semiconductor waferKOMATSU DENSHI KINZOKU KK·Filed 1992·Granted Jul 16, 1996·94 cites·4 claims
- 1778US6977010B2Apparatus for pulling single crystal by CZ methodKOMATSU DENSHI KINZOKU KK·Filed 2003·Granted Dec 20, 2005·12 cites·8 claims
- 1878US5821166AMethod of manufacturing semiconductor wafersKOMATSU DENSHI KINZOKU KK·Filed 1996·Granted Oct 13, 1998·56 cites·4 claims
- 1978US5725100ASemiconductor wafer caseKOMATSU DENSHI KINZOKU KK·Filed 1996·Granted Mar 10, 1998·52 cites·2 claims
- 2078US5441014AApparatus for pulling up a single crystalKOMATSU DENSHI KINZOKU KK·Filed 1991·Granted Aug 15, 1995·26 cites·4 claims
- 2178US4565913AMethod for the disintegration of silicon for semiconductorKOMATSU DENSHI KINZOKU KK·Filed 1984·Granted Jan 21, 1986·28 cites·6 claims
- 2276US5853480AApparatus for fabricating a single-crystal semiconductorKOMATSU DENSHI KINZOKU KK·Filed 1997·Granted Dec 29, 1998·33 cites·2 claims
- 2375US5766347AApparatus for fabricating a semiconductor single crystalKOMATSU DENSHI KINZOKU KK·Filed 1997·Granted Jun 16, 1998·35 cites·5 claims
- 2474US5875770AMethod of cutting semiconductor ingots and apparatus for cutting thereofKOMATSU DENSHI KINZOKU KK·Filed 1997·Granted Mar 2, 1999·39 cites·6 claims
- 2574US5658809ASOI substrate and method of producing the sameKOMATSU DENSHI KINZOKU KK·Filed 1995·Granted Aug 19, 1997·46 cites·9 claims
- 2673US6572699B1Method and apparatus for detecting melt levelKOMATSU DENSHI KINZOKU KK·Filed 2000·Granted Jun 3, 2003·16 cites·22 claims
- 2772US6006737ADevice and method for cutting semiconductor-crystal barsKOMATSU DENSHI KINZOKU KK·Filed 1998·Granted Dec 28, 1999·33 cites·7 claims
- 2871US5918136ASOI substrate and method of producing the sameKOMATSU DENSHI KINZOKU KK·Filed 1997·Granted Jun 29, 1999·39 cites·2 claims
- 2969US6994748B2Method and apparatus for measuring melt levelKOMATSU DENSHI KINZOKU KK·Filed 2001·Granted Feb 7, 2006·8 cites·6 claims
- 3069US6066565AMethod of manufacturing a semiconductor waferKOMATSU DENSHI KINZOKU KK·Filed 1998·Granted May 23, 2000·44 cites·7 claims
- 3169US5935326AApparatus for manufacturing semiconductor single crystalsKOMATSU DENSHI KINZOKU KK·Filed 1997·Granted Aug 10, 1999·21 cites·5 claims
- 3269US5660629AApparatus for detecting the diameter of a single-crystal siliconKOMATSU DENSHI KINZOKU KK·Filed 1996·Granted Aug 26, 1997·21 cites·3 claims
- 3369US5427056AApparatus and method for producing single crystalKOMATSU DENSHI KINZOKU KK·Filed 1990·Granted Jun 27, 1995·21 cites·20 claims
- 3468US7141113B1Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal waferKOMATSU DENSHI KINZOKU KK·Filed 1999·Granted Nov 28, 2006·22 cites·5 claims
- 3568US6569236B1Device and method for producing single-crystal ingotKOMATSU DENSHI KINZOKU KK·Filed 2000·Granted May 27, 2003·13 cites·22 claims
- 3668US5899743AMethod for fabricating semiconductor wafersKOMATSU DENSHI KINZOKU KK·Filed 1996·Granted May 4, 1999·36 cites·2 claims
- 3767US6777820B2Semiconductor waferKOMATSU DENSHI KINZOKU KK·Filed 2000·Granted Aug 17, 2004·19 cites·18 claims
- 3866US7329317B2Method for producing silicon waferKOMATSU DENSHI KINZOKU KK·Filed 2003·Granted Feb 12, 2008·6 cites·7 claims
- 3966US5997635AMethod for fabricating a single-crystal semiconductorKOMATSU DENSHI KINZOKU KK·Filed 1998·Granted Dec 7, 1999·22 cites·3 claims
- 4066US5924916AApparatus and method for polishing a semiconductor waferKOMATSU DENSHI KINZOKU KK·Filed 1996·Granted Jul 20, 1999·26 cites·13 claims
- 4165US6090688AMethod for fabricating an SOI substrateKOMATSU DENSHI KINZOKU KK·Filed 1996·Granted Jul 18, 2000·31 cites·2 claims
- 4264US5908042ABasket for cleaning semiconductor wafers and method of cleaning semiconductor wafers using the sameKOMATSU DENSHI KINZOKU KK·Filed 1997·Granted Jun 1, 1999·35 cites·5 claims
- 4363US5866094AMethod of feeding dopant for continuously-charged method and a dopant compositionKOMATSU DENSHI KINZOKU KK·Filed 1997·Granted Feb 2, 1999·16 cites·1 claims
- 4463US5488923AMethod for producing single crystalKOMATSU DENSHI KINZOKU KK·Filed 1995·Granted Feb 6, 1996·17 cites·2 claims
- 4562US6245678B1Method for manufacturing semiconductor wafersKOMATSU DENSHI KINZOKU KK·Filed 1999·Granted Jun 12, 2001·24 cites·6 claims
- 4662US6171393B1Seed crystal and method of manufacturing single crystalKOMATSU DENSHI KINZOKU KK·Filed 1999·Granted Jan 9, 2001·23 cites·49 claims
- 4762US6068699AApparatus for fabricating semiconductor single crystalKOMATSU DENSHI KINZOKU KK·Filed 1996·Granted May 30, 2000·16 cites·3 claims
- 4862US5665613AMethod of making semiconductor device having SIMOX structureKOMATSU DENSHI KINZOKU KK·Filed 1995·Granted Sep 9, 1997·31 cites·5 claims
- 4962US2008311019A1Apparatus for pulling single crystal by CZ methodKOMATSU DENSHI KINZOKU KK·Filed 2007·Application pending·0 cites
- 5061US7160386B2Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingotKOMATSU DENSHI KINZOKU KK·Filed 2002·Granted Jan 9, 2007·4 cites·6 claims
Showing the top 50 of 143 patent records by PatentIndex Score.
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