Assignee
KRETZER ULRICH
DE·2 granted patents·6 citations·filing 2008–2009
Top patents by PatentIndex Score
2 records- 0177US8329295B2Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficientKRETZER ULRICH·Filed 2009·Granted Dec 11, 2012·4 cites·6 claims
- 0273US8771560B2Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystalKRETZER ULRICH·Filed 2008·Granted Jul 8, 2014·2 cites·13 claims
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