Assignee
KRONHOLZ STEPHAN
DE·41 granted patents·7 pending applications·138 citations·filing 2009–2012
Top patents by PatentIndex Score
48 records- 0192US8071442B2Transistor with embedded Si/Ge material having reduced offset to the channel regionKRONHOLZ STEPHAN·Filed 2009·Granted Dec 6, 2011·22 cites·17 claims
- 0290US8334185B2Early embedded silicon germanium with insitu boron doping and oxide/nitride proximity spacerKRONHOLZ STEPHAN·Filed 2011·Granted Dec 18, 2012·15 cites·11 claims
- 0390US8124467B2Reducing silicide resistance in silicon/germanium-containing drain/source regions of transistorsKRONHOLZ STEPHAN·Filed 2010·Granted Feb 28, 2012·11 cites·18 claims
- 0487US8609498B2Transistor with embedded Si/Ge material having reduced offset and superior uniformityKRONHOLZ STEPHAN·Filed 2011·Granted Dec 17, 2013·8 cites·18 claims
- 0585US8728896B2Embedded sigma-shaped semiconductor alloys formed in transistors by applying a uniform oxide layer prior to cavity etchingKRONHOLZ STEPHAN·Filed 2011·Granted May 20, 2014·7 cites·17 claims
- 0682US8338892B2Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by corner rounding at the top of the gate electrodeKRONHOLZ STEPHAN·Filed 2010·Granted Dec 25, 2012·5 cites·20 claims
- 0781US8258053B2Performance enhancement in transistors comprising high-K metal gate stack by reducing a width of offset spacersKRONHOLZ STEPHAN·Filed 2010·Granted Sep 4, 2012·6 cites·18 claims
- 0881US8247282B2Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation processKRONHOLZ STEPHAN·Filed 2010·Granted Aug 21, 2012·6 cites·17 claims
- 0976US8796080B2Methods of epitaxially forming materials on transistor devicesKRONHOLZ STEPHAN·Filed 2011·Granted Aug 5, 2014·4 cites·13 claims
- 1076US8642419B2Methods of forming isolation structures for semiconductor devicesKRONHOLZ STEPHAN·Filed 2012·Granted Feb 4, 2014·4 cites·9 claims
- 1175US8969190B2Methods of forming a layer of silicon on a layer of silicon/germaniumKRONHOLZ STEPHAN·Filed 2012·Granted Mar 3, 2015·3 cites·24 claims
- 1275US8765559B2Sophisticated gate electrode structures formed by cap layer removal with reduced loss of embedded strain-inducing semiconductor materialKRONHOLZ STEPHAN·Filed 2012·Granted Jul 1, 2014·4 cites·20 claims
- 1375US8486786B2Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth processKRONHOLZ STEPHAN·Filed 2010·Granted Jul 16, 2013·4 cites·24 claims
- 1475US8202777B2Transistor with an embedded strain-inducing material having a gradually shaped configurationKRONHOLZ STEPHAN·Filed 2009·Granted Jun 19, 2012·5 cites·26 claims
- 1574US8173501B2Reduced STI topography in high-K metal gate transistors by using a mask after channel semiconductor alloy depositionKRONHOLZ STEPHAN·Filed 2010·Granted May 8, 2012·3 cites·16 claims
- 1673US8293596B2Formation of a channel semiconductor alloy by depositing a hard mask for the selective epitaxial growthKRONHOLZ STEPHAN·Filed 2010·Granted Oct 23, 2012·4 cites·22 claims
- 1772US8541281B1Replacement gate process flow for highly scaled semiconductor devicesKRONHOLZ STEPHAN·Filed 2012·Granted Sep 24, 2013·4 cites·18 claims
- 1872US8338274B2Transistor device comprising an embedded semiconductor alloy having an asymmetric configurationKRONHOLZ STEPHAN·Filed 2009·Granted Dec 25, 2012·3 cites·25 claims
- 1971US8939765B2Reduction of defect rates in PFET transistors comprising a Si/Ge semiconductor material formed by epitaxial growthKRONHOLZ STEPHAN·Filed 2010·Granted Jan 27, 2015·3 cites·22 claims
- 2071US8703551B2Process flow to reduce hole defects in P-active regions and to reduce across-wafer threshold voltage scatterKRONHOLZ STEPHAN·Filed 2011·Granted Apr 22, 2014·2 cites·14 claims
- 2167US8884379B2Strain engineering in semiconductor devices by using a piezoelectric materialKRONHOLZ STEPHAN·Filed 2010·Granted Nov 11, 2014·2 cites·17 claims
- 2267US8460980B2Transistor comprising an embedded semiconductor alloy in drain and source regions extending under the gate electrodeKRONHOLZ STEPHAN·Filed 2010·Granted Jun 11, 2013·2 cites·15 claims
- 2366US8664049B2Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor materialKRONHOLZ STEPHAN·Filed 2010·Granted Mar 4, 2014·2 cites·22 claims
- 2465US8835209B2Complementary transistors comprising high-k metal gate electrode structures and epitaxially formed semiconductor materials in the drain and source areasKRONHOLZ STEPHAN·Filed 2012·Granted Sep 16, 2014·2 cites·24 claims
- 2565US8673668B2Test structure for controlling the incorporation of semiconductor alloys in transistors comprising high-k metal gate electrode structuresKRONHOLZ STEPHAN·Filed 2010·Granted Mar 18, 2014·2 cites·17 claims
- 2664US8513080B2Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor deviceKRONHOLZ STEPHAN·Filed 2011·Granted Aug 20, 2013·2 cites·20 claims
- 2763US8236654B2Reduction of threshold voltage variation in transistors comprising a channel semiconductor alloy by reducing deposition non-uniformitiesKRONHOLZ STEPHAN·Filed 2009·Granted Aug 7, 2012·2 cites·25 claims
- 2860US8673710B2Formation of a channel semiconductor alloy by a nitride hard mask layer and an oxide maskKRONHOLZ STEPHAN·Filed 2011·Granted Mar 18, 2014·1 cites·22 claims
- 2952US8518784B2Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustmentKRONHOLZ STEPHAN·Filed 2009·Granted Aug 27, 2013·0 cites·20 claims
- 3049US8466520B2Transistor with an embedded strain-inducing material having a gradually shaped configurationKRONHOLZ STEPHAN·Filed 2012·Granted Jun 18, 2013·0 cites·7 claims
- 3148US8609482B2Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation processKRONHOLZ STEPHAN·Filed 2012·Granted Dec 17, 2013·0 cites·15 claims
- 3248US8440561B2Three-dimensional semiconductor device comprising an inter-die connection on the basis of functional moleculesKRONHOLZ STEPHAN·Filed 2010·Granted May 14, 2013·0 cites·13 claims
- 3342US8623742B2Reduced STI loss for superior surface planarity of embedded stressors in densely packed semiconductor devicesKRONHOLZ STEPHAN·Filed 2011·Granted Jan 7, 2014·0 cites·11 claims
- 3441US8987144B2High-K metal gate electrode structures formed by cap layer removal without sacrificial spacerKRONHOLZ STEPHAN·Filed 2011·Granted Mar 24, 2015·0 cites·15 claims
- 3540US8722486B2Enhancing deposition uniformity of a channel semiconductor alloy by forming a recess prior to the well implantationKRONHOLZ STEPHAN·Filed 2010·Granted May 13, 2014·0 cites·22 claims
- 3640US2013221478A1Methods of forming isolation structures for semiconductor devices by employing a spin-on glass material or a flowable oxide materialKRONHOLZ STEPHAN·Filed 2012·Application pending·0 cites
- 3739US9269631B2Integration of semiconductor alloys in PMOS and NMOS transistors by using a common cavity etch processKRONHOLZ STEPHAN·Filed 2010·Granted Feb 23, 2016·0 cites·17 claims
- 3839US8772843B2Oxide deposition by using a double liner approach for reducing pattern density dependence in sophisticated semiconductor devicesKRONHOLZ STEPHAN·Filed 2011·Granted Jul 8, 2014·0 cites·30 claims
- 3939US2012025315A1Transistor with Embedded Strain-Inducing Material and Dummy Gate Electrodes Positioned Adjacent to the Active RegionKRONHOLZ STEPHAN·Filed 2011·Application pending·0 cites
- 4039US2013214392A1Methods of forming stepped isolation structures for semiconductor devices using a spacer techniqueKRONHOLZ STEPHAN·Filed 2012·Application pending·0 cites
- 4137US9548378B2Epitaxial channel formation methods and structuresKRONHOLZ STEPHAN·Filed 2012·Granted Jan 17, 2017·0 cites·13 claims
- 4237US8735253B2Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation processKRONHOLZ STEPHAN·Filed 2010·Granted May 27, 2014·0 cites·27 claims
- 4337US2012153354A1Performance enhancement in transistors comprising high-k metal gate stacks and an embedded stressor by performing a second epitaxy stepKRONHOLZ STEPHAN·Filed 2011·Application pending·0 cites
- 4437US2012161240A1Transistor Comprising an Embedded Sigma-Shaped Semiconductor Alloy Having Superior UniformityKRONHOLZ STEPHAN·Filed 2011·Application pending·0 cites
- 4536US8445378B2Method of manufacturing a CMOS device including molecular storage elements in a via levelKRONHOLZ STEPHAN·Filed 2010·Granted May 21, 2013·0 cites·23 claims
- 4636US2010327358A1Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ n-doped semiconductor materialKRONHOLZ STEPHAN·Filed 2010·Application pending·0 cites
- 4735US2012153350A1Semiconductor devices and methods for fabricating the sameKRONHOLZ STEPHAN·Filed 2010·Application pending·0 cites
- 4831US8283225B2Enhancing selectivity during formation of a channel semiconductor alloy by a wet oxidation processKRONHOLZ STEPHAN·Filed 2010·Granted Oct 9, 2012·0 cites·17 claims
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