Individual holder
KUB FRANCIS J
US·24 granted patents·147 citations·filing 2011–2015
Individually held — no corporate assignee on record.
Top patents by PatentIndex Score
24 records- 0197US9246305B1Light-emitting devices with integrated diamondKUB FRANCIS J·Filed 2015·Granted Jan 26, 2016·15 cites·12 claims
- 0295US8900939B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2014·Granted Dec 2, 2014·17 cites·5 claims
- 0394US9006791B2III-nitride P-channel field effect transistor with hole carriers in the channelKUB FRANCIS J·Filed 2014·Granted Apr 14, 2015·12 cites·15 claims
- 0493US8872159B2Graphene on semiconductor detectorKUB FRANCIS J·Filed 2012·Granted Oct 28, 2014·8 cites·29 claims
- 0592US9196614B2Inverted III-nitride P-channel field effect transistor with hole carriers in the channelKUB FRANCIS J·Filed 2015·Granted Nov 24, 2015·7 cites·15 claims
- 0691US8501531B2Method of forming graphene on a surfaceKUB FRANCIS J·Filed 2012·Granted Aug 6, 2013·10 cites·12 claims
- 0790US9014221B2Infrared laserKUB FRANCIS J·Filed 2012·Granted Apr 21, 2015·8 cites·5 claims
- 0888US9099375B2Diamond and diamond composite materialKUB FRANCIS J·Filed 2013·Granted Aug 4, 2015·10 cites·23 claims
- 0987US9685513B2Semiconductor structure or device integrated with diamondKUB FRANCIS J·Filed 2013·Granted Jun 20, 2017·9 cites·20 claims
- 1086US9327982B2Method of forming graphene on a surfaceKUB FRANCIS J·Filed 2013·Granted May 3, 2016·6 cites·8 claims
- 1186US9111786B1Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2014·Granted Aug 18, 2015·4 cites·8 claims
- 1286US9029833B2Graphene on semiconductor detectorKUB FRANCIS J·Filed 2014·Granted May 12, 2015·3 cites·15 claims
- 1386US8647918B2Formation of graphene on a surfaceKUB FRANCIS J·Filed 2013·Granted Feb 11, 2014·6 cites·14 claims
- 1485US9236432B2Graphene base transistor with reduced collector areaKUB FRANCIS J·Filed 2014·Granted Jan 12, 2016·6 cites·14 claims
- 1585US9018056B2Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2014·Granted Apr 28, 2015·4 cites·5 claims
- 1685US8648390B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2013·Granted Feb 11, 2014·6 cites·31 claims
- 1781US9059565B1Ring cavity laser deviceKUB FRANCIS J·Filed 2015·Granted Jun 16, 2015·2 cites·8 claims
- 1879US9184266B2Transistor having graphene baseKUB FRANCIS J·Filed 2014·Granted Nov 10, 2015·4 cites·38 claims
- 1979US8901536B2Transistor having graphene baseKUB FRANCIS J·Filed 2011·Granted Dec 2, 2014·4 cites·25 claims
- 2077US9275998B2Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channelKUB FRANCIS J·Filed 2014·Granted Mar 1, 2016·2 cites·19 claims
- 2170US9117736B2Diamond and diamond composite materialKUB FRANCIS J·Filed 2013·Granted Aug 25, 2015·2 cites·34 claims
- 2270US9065246B2Infrared laserKUB FRANCIS J·Filed 2014·Granted Jun 23, 2015·1 cites·16 claims
- 2369US8885676B2Infrared laserKUB FRANCIS J·Filed 2012·Granted Nov 11, 2014·1 cites·32 claims
- 2456US9105499B1Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2015·Granted Aug 11, 2015·0 cites·12 claims
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