Assignee
KURAHASHI NAOKO
JP·2 granted patents·2 citations·filing 2010–2011
Top patents by PatentIndex Score
2 records- 0161US8557645B2Semiconductor device with a gate electrode having a shape formed based on a slope and gate lower opening and method of manufacturing the sameKURAHASHI NAOKO·Filed 2010·Granted Oct 15, 2013·2 cites·10 claims
- 0240US8729604B2Compound semiconductor device, method for manufacturing the device and electric deviceKURAHASHI NAOKO·Filed 2011·Granted May 20, 2014·0 cites·14 claims
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