Assignee
KYONO TAKASHI
JP·11 granted patents·1 pending application·18 citations·filing 2006–2012
Top patents by PatentIndex Score
12 records- 0184US8718110B2Nitride semiconductor laser and epitaxial substrateKYONO TAKASHI·Filed 2012·Granted May 6, 2014·6 cites·21 claims
- 0275US8513684B2Nitride semiconductor light emitting deviceKYONO TAKASHI·Filed 2011·Granted Aug 20, 2013·3 cites·20 claims
- 0375US8207556B2Group III nitride semiconductor device and epitaxial substrateKYONO TAKASHI·Filed 2011·Granted Jun 26, 2012·2 cites·28 claims
- 0473US8803274B2Nitride-based semiconductor light-emitting elementKYONO TAKASHI·Filed 2010·Granted Aug 12, 2014·3 cites·10 claims
- 0566US8884306B2Semiconductor device and method for manufacturing the sameKYONO TAKASHI·Filed 2012·Granted Nov 11, 2014·1 cites·2 claims
- 0665US8953656B2III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser deviceKYONO TAKASHI·Filed 2012·Granted Feb 10, 2015·1 cites·15 claims
- 0764US8071986B2Nitride semiconductor light-emitting elementKYONO TAKASHI·Filed 2006·Granted Dec 6, 2011·2 cites·4 claims
- 0854US8304269B2Method of fabricating group III nitride semiconductor deviceKYONO TAKASHI·Filed 2011·Granted Nov 6, 2012·0 cites·14 claims
- 0943US8823027B2Light emitting deviceKYONO TAKASHI·Filed 2010·Granted Sep 2, 2014·0 cites·6 claims
- 1042US8405066B2Nitride-based semiconductor light-emitting deviceKYONO TAKASHI·Filed 2010·Granted Mar 26, 2013·0 cites·7 claims
- 1140US8748868B2Nitride semiconductor light emitting device and epitaxial substrateKYONO TAKASHI·Filed 2011·Granted Jun 10, 2014·0 cites·20 claims
- 1240US2013105762A1Nitride semiconductor light emitting device, method of fabricating nitride semiconductor light emitting deviceKYONO TAKASHI·Filed 2012·Application pending·0 cites
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