Assignee
LEE JOONMYOUNG
KR6 patents
Top patents by PatentIndex Score
US10147873B2Dec 4, 2018
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
LEE JOONMYOUNG6 citations82
US9905753B2Feb 27, 2018
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
LEE JOONMYOUNG6 citations82
US9640755B2May 2, 2017
Magnetic memory device and method of manufacturing the same
LEE JOONMYOUNG4 citations72
US9985200B2May 29, 2018
Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the same
LEE JOONMYOUNG4 citations71
US9203014B2Dec 1, 2015
Magnetic memory devices having junction magnetic layers and buffer layers and related methods
LEE JOONMYOUNG2 citations61
US9934950B2Apr 3, 2018
Sputtering apparatuses and methods of manufacturing a magnetic memory device using the same
LEE JOONMYOUNG1 citations51