Assignee

LEE KYUWON

KR·2 granted patents·2 citations·filing 2010–2012

Technology mixH10W2

Top patents by PatentIndex Score

2 records

0164US8288202B2Method of forming partially-etched conductive layer recessed within substrate for bonding to semiconductor dieLEE KYUWON·Filed 2010·Granted Oct 16, 2012·2 cites·20 claims
0247US8502392B2Semiconductor device with partially-etched conductive layer recessed within substrate for bonding to semiconductor dieLEE KYUWON·Filed 2012·Granted Aug 6, 2013·0 cites·25 claims

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