Assignee
LEE YEEHENG
US8 patents
Top patents by PatentIndex Score
US8252647B2Aug 28, 2012
Fabrication of trench DMOS device having thick bottom shielding oxide
LEE YEEHENG21 citations92
US9000514B2Apr 7, 2015
Fabrication of trench DMOS device having thick bottom shielding oxide
LEE YEEHENG6 citations84
US8803251B2Aug 12, 2014
Termination of high voltage (HV) devices with new configurations and methods
LEE YEEHENG10 citations83
US8587061B2Nov 19, 2013
Power MOSFET device with self-aligned integrated Schottky diode
LEE YEEHENG6 citations83
US9136377B2Sep 15, 2015
High density MOSFET array with self-aligned contacts delimited by nitride-capped trench gate stacks and method
LEE YEEHENG5 citations73
US8697520B2Apr 15, 2014
Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS
LEE YEEHENG2 citations62
US8252648B2Aug 28, 2012
Power MOSFET device with self-aligned integrated Schottky and its manufacturing method
LEE YEEHENG3 citations62
US9627526B2Apr 18, 2017
Assymetric poly gate for optimum termination design in trench power MOSFETs
LEE YEEHENG0 citations51