Assignee
LENOBLE DAMIEN
FR2 patents
Top patents by PatentIndex Score
US8299541B2Oct 30, 2012
Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor
LENOBLE DAMIEN1 citations47
US8168504B2May 1, 2012
Integrated circuit comprising a gradually doped bipolar transistor and corresponding fabrication process
LENOBLE DAMIEN1 citations45