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LETZ TOBIAS
DE3 patents
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US8193086B2Jun 5, 2012
Local silicidation of via bottoms in metallization systems of semiconductor devices
LETZ TOBIAS8 citations81
US8859398B2Oct 14, 2014
Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge
LETZ TOBIAS3 citations60
US8841140B2Sep 23, 2014
Technique for forming a passivation layer without a terminal metal
LETZ TOBIAS0 citations39