Assignee
LEVY MAX G
US·2 granted patents·4 citations·filing 2010–2012
Top patents by PatentIndex Score
2 records- 0175US8487379B2Structure and method for buried inductors for ultra-high resistivity wafers for SOI/RF SiGe applicationsLEVY MAX G·Filed 2012·Granted Jul 16, 2013·3 cites·19 claims
- 0263US8188570B2Structure and method for buried inductors for ultra-high resistivity wafers for SOI/RF SiGe applicationsLEVY MAX G·Filed 2010·Granted May 29, 2012·1 cites·20 claims
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