Assignee
LIN JR JUNG
TW·4 granted patents·30 citations·filing 2009–2012
Top patents by PatentIndex Score
4 records- 0193US8912610B2Structure and method for MOSFETS with high-K and metal gate structureLIN JR JUNG·Filed 2012·Granted Dec 16, 2014·22 cites·16 claims
- 0283US8803241B2Dummy gate electrode of semiconductor deviceLIN JR-JUNG·Filed 2012·Granted Aug 12, 2014·5 cites·20 claims
- 0370US8304349B2Method to integrate gate etching as all-in-one process for high K metal gateLIN JR JUNG·Filed 2009·Granted Nov 6, 2012·3 cites·17 claims
- 0454US9991375B2Metal gate electrode of a semiconductor deviceLIN JR JUNG·Filed 2012·Granted Jun 5, 2018·0 cites·20 claims
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →