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LIN KAI-CHUN

TW2 patents

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US8964458B2Feb 24, 2015

Differential MRAM structure with relatively reversed magnetic tunnel junction elements enabling writing using same polarity current

LIN KAI-CHUN13 citations82

US8509003B2Aug 13, 2013

Read architecture for MRAM

LIN KAI-CHUN16 citations82