Assignee
LIN MEI-HSUAN
TW7 patents
Top patents by PatentIndex Score
US8533639B2Sep 10, 2013
Optical proximity correction for active region design layout
LIN MEI-HSUAN7 citations81
US8994097B2Mar 31, 2015
MOS devices having non-uniform stressor doping
LIN MEI-HSUAN2 citations61
US8513143B2Aug 20, 2013
Semiconductor structure and method of manufacturing
LIN MEI-HSUAN2 citations61
US9343318B2May 17, 2016
Salicide formation using a cap layer
LIN MEI-HSUAN0 citations51
US8846492B2Sep 30, 2014
Integrated circuit having a stressor and method of forming the same
LIN MEI-HSUAN0 citations51
US8470660B2Jun 25, 2013
Method of manufacturing a semiconductor device
LIN MEI-HSUAN1 citations51
US8527915B2Sep 3, 2013
Method and system for modifying doped region design layout during mask preparation to tune device performance
LIN MEI-HSUAN0 citations40