Assignee
LUNG HSIANG-LAN
US·54 granted patents·1 pending application·1,219 citations·filing 2004–2012
Top patents by PatentIndex Score
55 records- 0199US8426294B23D memory array arranged for FN tunneling program and eraseLUNG HSIANG-LAN·Filed 2012·Granted Apr 23, 2013·165 cites·18 claims
- 0299US8203187B23D memory array arranged for FN tunneling program and eraseLUNG HSIANG-LAN·Filed 2010·Granted Jun 19, 2012·309 cites·24 claims
- 0398US8437192B23D two bit-per-cell NAND flash memoryLUNG HSIANG-LAN·Filed 2010·Granted May 7, 2013·61 cites·13 claims
- 0498US8089137B2Integrated circuit memory with single crystal silicon on silicide driver and manufacturing methodLUNG HSIANG-LAN·Filed 2009·Granted Jan 3, 2012·124 cites·19 claims
- 0597US8829646B2Integrated circuit 3D memory array and manufacturing methodLUNG HSIANG-LAN·Filed 2009·Granted Sep 9, 2014·49 cites·26 claims
- 0697US8173987B2Integrated circuit 3D phase change memory array and manufacturing methodLUNG HSIANG-LAN·Filed 2009·Granted May 8, 2012·68 cites·12 claims
- 0795US8605495B2Isolation device free memoryLUNG HSIANG-LAN·Filed 2011·Granted Dec 10, 2013·29 cites·15 claims
- 0895US8395935B2Cross-point self-aligned reduced cell size phase change memoryLUNG HSIANG-LAN·Filed 2010·Granted Mar 12, 2013·25 cites·6 claims
- 0995US8310864B2Self-aligned bit line under word line memory arrayLUNG HSIANG-LAN·Filed 2010·Granted Nov 13, 2012·17 cites·30 claims
- 1095US8178386B2Phase change memory cell array with self-converged bottom electrode and method for manufacturingLUNG HSIANG-LAN·Filed 2007·Granted May 15, 2012·26 cites·11 claims
- 1195US8154128B23D integrated circuit layer interconnectLUNG HSIANG-LAN·Filed 2009·Granted Apr 10, 2012·39 cites·8 claims
- 1295US8138028B2Method for manufacturing a phase change memory device with pillar bottom electrodeLUNG HSIANG LAN·Filed 2007·Granted Mar 20, 2012·25 cites·27 claims
- 1394US8729521B2Self aligned fin-type programmable memory cellLUNG HSIANG-LAN·Filed 2010·Granted May 20, 2014·15 cites·11 claims
- 1494US8164146B2Substrate symmetrical silicide source/drain surrounding gate transistorLUNG HSIANG-LAN·Filed 2009·Granted Apr 24, 2012·29 cites·20 claims
- 1590US8634235B2Phase change memory codingLUNG HSIANG-LAN·Filed 2010·Granted Jan 21, 2014·13 cites·22 claims
- 1688US9018692B2Low cost scalable 3D memoryLUNG HSIANG-LAN·Filed 2011·Granted Apr 28, 2015·11 cites·15 claims
- 1788US8237140B2Self-aligned, embedded phase change RAMLUNG HSIANG LAN·Filed 2006·Granted Aug 7, 2012·17 cites·19 claims
- 1887US9082954B2PCRAM with current flowing laterally relative to axis defined by electrodesLUNG HSIANG-LAN·Filed 2011·Granted Jul 14, 2015·6 cites·22 claims
- 1987US8324605B2Dielectric mesh isolated phase change structure for phase change memoryLUNG HSIANG-LAN·Filed 2008·Granted Dec 4, 2012·16 cites·21 claims
- 2086US8406033B2Memory device and method for sensing and fixing margin cellsLUNG HSIANG-LAN·Filed 2009·Granted Mar 26, 2013·17 cites·12 claims
- 2186US8097487B2Method for making a phase change memory device with vacuum cell thermal isolationLUNG HSIANG-LAN·Filed 2010·Granted Jan 17, 2012·6 cites·6 claims
- 2285US8497182B2Sidewall thin film electrode with self-aligned top electrode and programmable resistance memoryLUNG HSIANG-LAN·Filed 2011·Granted Jul 30, 2013·7 cites·14 claims
- 2385US8064248B22T2R-1T1R mix mode phase change memory arrayLUNG HSIANG-LAN·Filed 2009·Granted Nov 22, 2011·15 cites·20 claims
- 2484US8933536B2Polysilicon pillar bipolar transistor with self-aligned memory elementLUNG HSIANG-LAN·Filed 2009·Granted Jan 13, 2015·11 cites·12 claims
- 2584US8624299B2Stacked bit line dual word line nonvolatile memoryLUNG HSIANG-LAN·Filed 2011·Granted Jan 7, 2014·4 cites·11 claims
- 2684US8143612B2Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturingLUNG HSIANG-LAN·Filed 2009·Granted Mar 27, 2012·10 cites·5 claims
- 2784US8084760B2Ring-shaped electrode and manufacturing method for sameLUNG HSIANG-LAN·Filed 2009·Granted Dec 27, 2011·14 cites·13 claims
- 2883US8981330B2Thermally-confined spacer PCM cellsLUNG HSIANG-LAN·Filed 2012·Granted Mar 17, 2015·7 cites·10 claims
- 2983US8315088B2Multiple phase change materials in an integrated circuit for system on a chip applicationLUNG HSIANG-LAN·Filed 2011·Granted Nov 20, 2012·7 cites·14 claims
- 3081US8860111B2Phase change memory cell array with self-converged bottom electrode and method for manufacturingLUNG HSIANG-LAN·Filed 2012·Granted Oct 14, 2014·4 cites·20 claims
- 3178US9019771B2Dielectric charge trapping memory cells with redundancyLUNG HSIANG-LAN·Filed 2012·Granted Apr 28, 2015·6 cites·14 claims
- 3278US8476157B2Buried bit line anti-fuse one-time-programmable nonvolatile memoryLUNG HSIANG-LAN·Filed 2010·Granted Jul 2, 2013·3 cites·8 claims
- 3378US8415651B2Phase change memory cell having top and bottom sidewall contactsLUNG HSIANG-LAN·Filed 2008·Granted Apr 9, 2013·5 cites·21 claims
- 3478US8228721B2Refresh circuitry for phase change memoryLUNG HSIANG-LAN·Filed 2011·Granted Jul 24, 2012·5 cites·20 claims
- 3577US8143089B2Self-align planerized bottom electrode phase change memory and manufacturing methodLUNG HSIANG-LAN·Filed 2010·Granted Mar 27, 2012·4 cites·14 claims
- 3676US9001550B2Blocking current leakage in a memory arrayLUNG HSIANG-LAN·Filed 2012·Granted Apr 7, 2015·5 cites·21 claims
- 3776US8907316B2Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regionsLUNG HSIANG-LAN·Filed 2008·Granted Dec 9, 2014·6 cites·31 claims
- 3876US8222071B2Method for making self aligning pillar memory cell deviceLUNG HSIANG-LAN·Filed 2011·Granted Jul 17, 2012·3 cites·10 claims
- 3975US8313979B2Phase change memory cell having vertical channel access transistorLUNG HSIANG-LAN·Filed 2011·Granted Nov 20, 2012·3 cites·18 claims
- 4074US8110430B2Vacuum jacket for phase change memory elementLUNG HSIANG-LAN·Filed 2010·Granted Feb 7, 2012·5 cites·6 claims
- 4173US8101938B2Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the methodLUNG HSIANG-LAN·Filed 2007·Granted Jan 24, 2012·3 cites·20 claims
- 4271US8110456B2Method for making a self aligning memory deviceLUNG HSIANG-LAN·Filed 2010·Granted Feb 7, 2012·2 cites·19 claims
- 4371US8062923B2Thin film fuse phase change cell with thermal isolation pad and manufacturing methodLUNG HSIANG LAN·Filed 2009·Granted Nov 22, 2011·6 cites·15 claims
- 4470US8513637B24F2 self align fin bottom electrodes FET drive phase change memoryLUNG HSIANG-LAN·Filed 2007·Granted Aug 20, 2013·7 cites·35 claims
- 4563US8263960B2Phase change memory cell with filled sidewall memory element and method for fabricating the sameLUNG HSIANG-LAN·Filed 2010·Granted Sep 11, 2012·2 cites·14 claims
- 4662US8237148B24F2 self align side wall active phase change memoryLUNG HSIANG-LAN·Filed 2010·Granted Aug 7, 2012·2 cites·8 claims
- 4759US8093661B2Integrated circuit device with single crystal silicon on silicide and manufacturing methodLUNG HSIANG-LAN·Filed 2009·Granted Jan 10, 2012·1 cites·16 claims
- 4858US8664689B2Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regionsLUNG HSIANG-LAN·Filed 2008·Granted Mar 4, 2014·1 cites·25 claims
- 4956US8237144B2Polysilicon plug bipolar transistor for phase change memoryLUNG HSIANG-LAN·Filed 2011·Granted Aug 7, 2012·1 cites·21 claims
- 5054US8927957B2Sidewall diode driving device and memory using sameLUNG HSIANG-LAN·Filed 2012·Granted Jan 6, 2015·1 cites·22 claims
Showing the top 50 of 55 patent records by PatentIndex Score.
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