Assignee
MAEKAWA SHINJI
JP·23 granted patents·1 pending application·123 citations·filing 2004–2012
Top patents by PatentIndex Score
24 records- 0196US8247814B2Active matrix display device including a metal oxide semiconductor filmMAEKAWA SHINJI·Filed 2011·Granted Aug 21, 2012·20 cites·12 claims
- 0295US8445901B2Manufacturing method of semiconductor deviceMAEKAWA SHINJI·Filed 2012·Granted May 21, 2013·13 cites·31 claims
- 0395US8227294B2Manufacturing method of semiconductor deviceMAEKAWA SHINJI·Filed 2010·Granted Jul 24, 2012·11 cites·16 claims
- 0494US8575618B2Electronic device, semiconductor device and manufacturing method thereofMAEKAWA SHINJI·Filed 2012·Granted Nov 5, 2013·13 cites·27 claims
- 0594US8207533B2Electronic device, semiconductor device and manufacturing method thereofMAEKAWA SHINJI·Filed 2008·Granted Jun 26, 2012·22 cites·12 claims
- 0685US8563438B2Method for manufacturing semiconductor deviceMAEKAWA SHINJI·Filed 2009·Granted Oct 22, 2013·7 cites·14 claims
- 0784US8293457B2Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL televisionMAEKAWA SHINJI·Filed 2009·Granted Oct 23, 2012·5 cites·20 claims
- 0882US8461013B2Semiconductor device and method for manufacturing the sameMAEKAWA SHINJI·Filed 2010·Granted Jun 11, 2013·5 cites·12 claims
- 0979US8624252B2Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and el televisionMAEKAWA SHINJI·Filed 2012·Granted Jan 7, 2014·3 cites·10 claims
- 1077US8132458B2Acceleration sensor resistant to excessive force breakageMAEKAWA SHINJI·Filed 2009·Granted Mar 13, 2012·6 cites·6 claims
- 1176US8300290B2Piezoelectric mirror device, optical equipment incorporating the same, and piezoelectric mirror device fabrication processMAEKAWA SHINJI·Filed 2008·Granted Oct 30, 2012·5 cites·9 claims
- 1274US8535965B2Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride filmMAEKAWA SHINJI·Filed 2012·Granted Sep 17, 2013·2 cites·12 claims
- 1374US8227805B2Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride filmMAEKAWA SHINJI·Filed 2007·Granted Jul 24, 2012·3 cites·29 claims
- 1473US8997570B2High impact resistant acceleration sensorMAEKAWA SHINJI·Filed 2011·Granted Apr 7, 2015·2 cites·7 claims
- 1570US8278204B2Methods for forming wiring and manufacturing thin film transistor and droplet discharging methodMAEKAWA SHINJI·Filed 2011·Granted Oct 2, 2012·2 cites·9 claims
- 1669US8637397B2Method for manufacturing a through hole electrode substrateMAEKAWA SHINJI·Filed 2012·Granted Jan 28, 2014·3 cites·5 claims
- 1760US8912546B2Thin film transistor and display deviceMAEKAWA SHINJI·Filed 2009·Granted Dec 16, 2014·1 cites·17 claims
- 1855US8570630B2Piezoelectric mirror device, optical equipment incorporating the same, and piezoelectric mirror device fabrication processMAEKAWA SHINJI·Filed 2012·Granted Oct 29, 2013·0 cites·2 claims
- 1953US8539655B2Fabrication process for a piezoelectric mirror deviceMAEKAWA SHINJI·Filed 2011·Granted Sep 24, 2013·0 cites·2 claims
- 2053US8455335B2Manufacturing method of semiconductor deviceMAEKAWA SHINJI·Filed 2010·Granted Jun 4, 2013·0 cites·25 claims
- 2148US9237657B2Wiring substrate, semiconductor device, and method for manufacturing thereofMAEKAWA SHINJI·Filed 2012·Granted Jan 12, 2016·0 cites·3 claims
- 2243US8288772B2Through hole electrode substrate with different area weighted average crystal grain diameter of metal in the conductive part and semiconductor device using the through hole electrode substrateMAEKAWA SHINJI·Filed 2010·Granted Oct 16, 2012·0 cites·20 claims
- 2341US8263983B2Wiring substrate and semiconductor deviceMAEKAWA SHINJI·Filed 2004·Granted Sep 11, 2012·0 cites·6 claims
- 2436US2007164280A1Thin film transistor, manufacturing method for thin film transistor and manufacturing method for display deviceMAEKAWA SHINJI·Filed 2004·Application pending·0 cites
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