Assignee
MAKAROV YURI
US·2 granted patents·1 pending application·53 citations·filing 2007–2011
Top patents by PatentIndex Score
3 records- 0194US8329252B2Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactorMAKAROV YURI·Filed 2011·Granted Dec 11, 2012·52 cites·1 claims
- 0268US8088222B2Method, system, and apparatus for the growth of on-axis SiC and similar semiconductor materialsMAKAROV YURI·Filed 2007·Granted Jan 3, 2012·1 cites·15 claims
- 0356US2008173239A1Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactorMAKAROV YURI·Filed 2007·Application pending·0 cites
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