Assignee
MARUYAMA FUMIAKI
JP·2 granted patents·2 citations·filing 2000–2012
Top patents by PatentIndex Score
2 records- 0145US9163327B2Silicon wafer and a silicon epitaxial wafer having a polycrystal silicon layer formed on a major surface including boron concentration of the polycrystal silicon layer being 1×1015 atom/cm3 or lessMARUYAMA FUMIAKI·Filed 2012·Granted Oct 20, 2015·0 cites·6 claims
- 0243US8273146B1Wafer and epitaxial wafer, and manufacturing processes thereforMARUYAMA FUMIAKI·Filed 2000·Granted Sep 25, 2012·2 cites·11 claims
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