Assignee

MATSUMURA HISASHI

JP·1 granted patent·2 citations·filing 2010–2010

Technology mixC23C1 C30B1 G02B1 H10P1

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0160US8673748B2Method for fabricating semiconductor thin film using substrate irradiated with focused light, apparatus for fabricating semiconductor thin film using substrate irradiated with focused light, method for selectively growing semiconductor thin film using substrate irradiated with focused light, and semiconductor element using substrate irradiated with focused lightMATSUMURA HISASHI·Filed 2010·Granted Mar 18, 2014·2 cites·9 claims

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