Assignee
MIKI HISAYUKI
JP·12 granted patents·1 pending application·46 citations·filing 2003–2011
Top patents by PatentIndex Score
13 records- 0183US8168460B2Method for manufacturing group III nitride compound semiconductor light-emitting device, group III nitride compound semiconductor light-emitting device, and lampMIKI HISAYUKI·Filed 2007·Granted May 1, 2012·8 cites·14 claims
- 0282US8115212B2Positive electrode for semiconductor light-emitting deviceMIKI HISAYUKI·Filed 2005·Granted Feb 14, 2012·10 cites·30 claims
- 0378US8669129B2Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lampMIKI HISAYUKI·Filed 2009·Granted Mar 11, 2014·6 cites·40 claims
- 0474US8642992B2Group III nitride compound semiconductor light emitting deviceMIKI HISAYUKI·Filed 2009·Granted Feb 4, 2014·4 cites·10 claims
- 0573US8882971B2Sputtering apparatus and manufacturing method of semiconductor light-emitting elementMIKI HISAYUKI·Filed 2011·Granted Nov 11, 2014·2 cites·2 claims
- 0673US8569794B2Group III nitride semiconductor device and method for manufacturing the same, group III nitride semiconductor light-emitting device and method for manufacturing the same, and lampMIKI HISAYUKI·Filed 2009·Granted Oct 29, 2013·4 cites·10 claims
- 0772US8550645B2Illumination device for display device, and display deviceMIKI HISAYUKI·Filed 2009·Granted Oct 8, 2013·5 cites·19 claims
- 0871US8389313B2Deposition method of III group nitride compound semiconductor laminated structureMIKI HISAYUKI·Filed 2007·Granted Mar 5, 2013·3 cites·12 claims
- 0967US8227284B2Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lampMIKI HISAYUKI·Filed 2007·Granted Jul 24, 2012·2 cites·14 claims
- 1066US8148712B2Group III nitride compound semiconductor stacked structureMIKI HISAYUKI·Filed 2007·Granted Apr 3, 2012·2 cites·27 claims
- 1158US8557092B2Sputtering deposition apparatus and backing plate for use in sputtering deposition apparatusMIKI HISAYUKI·Filed 2007·Granted Oct 15, 2013·0 cites·8 claims
- 1242US2007243414A1Positive Electrode Structure and Gallium Nitride-Based Compound Semiconductor Light-Emitting DeviceMIKI HISAYUKI·Filed 2005·Application pending·0 cites
- 1338US8236103B2Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial waferMIKI HISAYUKI·Filed 2003·Granted Aug 7, 2012·0 cites·13 claims
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