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MIN TAI
US7 patents
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US8564903B2Oct 22, 2013
Writer with an AFM write gap
MIN TAI17 citations92
US8456778B2Jun 4, 2013
Writer design with enhanced writability
MIN TAI7 citations84
US8169816B2May 1, 2012
Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory
MIN TAI17 citations82
US8497559B2Jul 30, 2013
MRAM with means of controlling magnetic anisotropy
MIN TAI3 citations62
US8446689B2May 21, 2013
High data rate magnetic writer design
MIN TAI2 citations62
US8422287B2Apr 16, 2013
Pulse field assisted spin momentum transfer MRAM design
MIN TAI2 citations62
US8525280B2Sep 3, 2013
Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy
MIN TAI0 citations52