Assignee
MINE TOSHIYUKI
JP·3 granted patents·1 pending application·31 citations·filing 2006–2012
Top patents by PatentIndex Score
4 records- 0186US9214516B2Field effect silicon carbide transistorMINE TOSHIYUKI·Filed 2012·Granted Dec 15, 2015·8 cites·12 claims
- 0280US8125012B2Non-volatile memory device with a silicon nitride charge holding film having an excess of siliconMINE TOSHIYUKI·Filed 2006·Granted Feb 28, 2012·20 cites·5 claims
- 0371US9318558B2MOS field effect transistorMINE TOSHIYUKI·Filed 2012·Granted Apr 19, 2016·3 cites·11 claims
- 0443US2012248422A1Optical semiconductor device and manufacturing method thereofMINE TOSHIYUKI·Filed 2012·Application pending·0 cites
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