Assignee
MITSUBISHI MATERIAL SILICON
JP·39 granted patents·2 pending applications·1,252 citations·filing 1994–2003
Top patents by PatentIndex Score
41 records- 0195US6474987B1Wafer holderMITSUBISHI MATERIAL SILICON·Filed 2000·Granted Nov 5, 2002·355 cites·13 claims
- 0293US6039809AMethod and apparatus for feeding a gas for epitaxial growthMITSUBISHI MATERIAL SILICON·Filed 1998·Granted Mar 21, 2000·363 cites·5 claims
- 0390US5539245ASemiconductor substrate having a gettering layerMITSUBISHI MATERIAL SILICON·Filed 1994·Granted Jul 23, 1996·122 cites·2 claims
- 0487US6663708B1Silicon wafer, and manufacturing method and heat treatment method of the sameMITSUBISHI MATERIAL SILICON·Filed 2000·Granted Dec 16, 2003·42 cites·1 claims
- 0582US7033843B2Semiconductor manufacturing method and semiconductor manufacturing apparatusMITSUBISHI MATERIAL SILICON·Filed 2003·Granted Apr 25, 2006·22 cites·8 claims
- 0678US5871581ASingle crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Feb 16, 1999·34 cites·5 claims
- 0775US5476065ASystem for pulling-up monocrystal and method of exhausting silicon oxideMITSUBISHI MATERIAL SILICON·Filed 1994·Granted Dec 19, 1995·31 cites·13 claims
- 0873US6491758B1CVD apparatus equipped with moisture monitoringMITSUBISHI MATERIAL SILICON·Filed 2000·Granted Dec 10, 2002·11 cites·9 claims
- 0972US6547875B1Epitaxial wafer and a method for manufacturing the sameMITSUBISHI MATERIAL SILICON·Filed 2000·Granted Apr 15, 2003·18 cites·4 claims
- 1070US6428619B1Silicon wafer, and heat treatment method of the same and the heat-treated silicon waferMITSUBISHI MATERIAL SILICON·Filed 2000·Granted Aug 6, 2002·16 cites·11 claims
- 1168US6693286B2Method for evaluating the quality of a semiconductor substrateMITSUBISHI MATERIAL SILICON·Filed 2002·Granted Feb 17, 2004·8 cites·2 claims
- 1268US6534774B2Method and apparatus for evaluating the quality of a semiconductor substrateMITSUBISHI MATERIAL SILICON·Filed 2001·Granted Mar 18, 2003·8 cites·4 claims
- 1365US6682597B2Silicon wafer, and heat treatment method of the same and the heat-treated silicon waferMITSUBISHI MATERIAL SILICON·Filed 2002·Granted Jan 27, 2004·7 cites·2 claims
- 1465US6379460B1Thermal shield device and crystal-pulling apparatus using the sameMITSUBISHI MATERIAL SILICON·Filed 2000·Granted Apr 30, 2002·12 cites·30 claims
- 1564US6348261B1Silicon waferMITSUBISHI MATERIAL SILICON·Filed 2000·Granted Feb 19, 2002·5 cites·2 claims
- 1663US5858087ASingle crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1996·Granted Jan 12, 1999·17 cites·18 claims
- 1763US5459104AProcess for production of semiconductor substrateMITSUBISHI MATERIAL SILICON·Filed 1994·Granted Oct 17, 1995·36 cites·9 claims
- 1862US5573591AMethod of exhausting silicon oxideMITSUBISHI MATERIAL SILICON·Filed 1995·Granted Nov 12, 1996·15 cites·6 claims
- 1959US6995834B2Method for analyzing impurities in a silicon substrate and apparatus for decomposing a silicon substrate through vapor-phase reactionMITSUBISHI MATERIAL SILICON·Filed 2001·Granted Feb 7, 2006·4 cites·18 claims
- 2057US7067428B2Method for cleaning polysiliconMITSUBISHI MATERIAL SILICON·Filed 2002·Granted Jun 27, 2006·2 cites·5 claims
- 2153US6146467ATreatment method for semiconductor substratesMITSUBISHI MATERIAL SILICON·Filed 1999·Granted Nov 14, 2000·24 cites·5 claims
- 2252US6296714B1Washing solution of semiconductor substrate and washing method using the sameMITSUBISHI MATERIAL SILICON·Filed 1998·Granted Oct 2, 2001·21 cites·13 claims
- 2351US6818197B2Epitaxial waferMITSUBISHI MATERIAL SILICON·Filed 2003·Granted Nov 16, 2004·4 cites·5 claims
- 2451US6776805B2Semiconductor manufacturing apparatus having a moisture measuring deviceMITSUBISHI MATERIAL SILICON·Filed 2001·Granted Aug 17, 2004·2 cites·16 claims
- 2551US6648967B2Crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot, and method thereforMITSUBISHI MATERIAL SILICON·Filed 2001·Granted Nov 18, 2003·6 cites·14 claims
- 2650US5779792ASingle crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Jul 14, 1998·10 cites·6 claims
- 2748US5840115ASingle crystal growth methodMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Nov 24, 1998·8 cites·8 claims
- 2847US6472289B2Dielectrically separated wafer and method of manufacturing the sameMITSUBISHI MATERIAL SILICON·Filed 2001·Granted Oct 29, 2002·3 cites·2 claims
- 2946US6451107B2Method for simulating the shape of the solid-liquid interface between a single crystal and a molten liquid, and the distribution of point defects of the single crystalMITSUBISHI MATERIAL SILICON·Filed 2001·Granted Sep 17, 2002·3 cites·5 claims
- 3042US6794204B2Semiconductor manufacturing method and semiconductor manufacturing apparatusMITSUBISHI MATERIAL SILICON·Filed 2002·Granted Sep 21, 2004·0 cites·3 claims
- 3142US6562692B1Dielectric isolated wafer and its production methodMITSUBISHI MATERIAL SILICON·Filed 1999·Granted May 13, 2003·13 cites·8 claims
- 3240US6447600B1Method of removing defects of single crystal material and single crystal material from which defects are removed by the methodMITSUBISHI MATERIAL SILICON·Filed 1999·Granted Sep 10, 2002·10 cites·14 claims
- 3337US5895527ASingle crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Apr 20, 1999·6 cites·22 claims
- 3436US5843228AApparatus for preventing heater electrode meltdown in single crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Dec 1, 1998·4 cites·4 claims
- 3534US5897706AMethods for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed thereinMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Apr 27, 1999·3 cites·5 claims
- 3633US6815774B1Dielectrically separated wafer and method of the sameMITSUBISHI MATERIAL SILICON·Filed 1999·Granted Nov 9, 2004·4 cites·4 claims
- 3733US2003124853A1Anisotropic etching method and apparatusMITSUBISHI MATERIAL SILICON·Filed 2003·Application pending·0 cites
- 3832US2002168880A1Method for cleaning polysiliconMITSUBISHI MATERIAL SILICON·Filed 2001·Application pending·0 cites
- 3931US6558990B1SOI substrate, method of manufacture thereof, and semiconductor device using SOI substrateMITSUBISHI MATERIAL SILICON·Filed 2000·Granted May 6, 2003·0 cites·13 claims
- 4029US5873938ASingle crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1996·Granted Feb 23, 1999·0 cites·26 claims
- 4128US6123767AMethod and apparatus for feeding a gas for epitaxial growthMITSUBISHI MATERIAL SILICON·Filed 1999·Granted Sep 26, 2000·3 cites·2 claims
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