Assignee

MIYAJIMA TAKASHI

JP·1 granted patent·5 citations·filing 2009–2009

Technology mixH10B1 H10D1 H10W1

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0169US8723244B2Semiconductor device having storage electrode and manufacturing method thereofMIYAJIMA TAKASHI·Filed 2009·Granted May 13, 2014·5 cites·20 claims

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